WebSTH315N10F7-2, STH315N10F7-6 Electrical ratings 19 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID (1) 1. Current limited by package. Drain current (continuous) at T C = 25°C 180 A ID (1) Drain current (continuous) at T C=100°C 120 A IDM (2) 2. WebSTH315N10F7-6 Manufacturer/Brand: STMicroelectronics Product Description: MOSFET N-CH 100V 180A H2PAK-6 Datasheets: STH315N10F7-6.pdf RoHs Status: Lead free / RoHS Compliant Stock Condition: 23065 pcs stock Ship From: Hong Kong Shipment Way: DHL/Fedex/TNT/UPS/EMS. REQUEST QUOTE.

STH315N10F7-6 STMicroelectronics Mouser Romania

WebThe STH315N10F7-6 is a N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced Trench gate structure that results in very low ON-state resistance. It is also reducing internal capacitance and gate charge for faster and more efficient switching. AEC-Q101 qualified Lowest RDS (ON) Excellent figure of merit (FoM) WebLearn More about STH315N10F7-6 Out of stock Notify me Save to My List Compare Parameter Description These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. cisco catalyst 4500 series

STH315N10F7-2 STMicroelectronics Distributors, Price …

WebSTH315N10F7-6 Trans MOSFET N-CH 100V 180A 7-Pin H2PAK T/R Click image to enlarge Manufacturer: STMicroelectronics Product Category: Discretes , FETs , Single MOSFETs … WebLearn More about STH315N10F7-6 Out of stock Notify me Save to My List Compare Parameter Description These N-channel Power MOSFETs utilize STripFET F7 technology … cisco catalyst 3850 series