Witrynaswing and on-current, and the donor-like trap acts on off-current level. All parameters used in the simulation are listed in Table I. Although the string has only 4 cells except selection devices by comparing with 64 cells in normal NAND string, we can investigate the self-boosting channel potential with various conditions. Witrynaand the string direction (b) (green = silicon, red = floating gate, magenta = WL, white = silicon oxide). Inset (c) shows the layout of the array with the elementary cell (dashed square). Cross-sections of a current planar NAND array are shown on the right of Figure1: Figure1a

(PDF) 3D NAND flash based on planar cells - ResearchGate

WitrynaThe cell string current of NAND flash memory is very small due to large resistance from the cells connected in series. In this paper, scaling effects on the cell current are … Witryna4 paź 2011 · Thus, for the erase operation, the hole current into the NAND string, generated by GIDL near the lower select gates (USG and LSG), is used to raise the body potential (Fig. 2.18). 21 High voltage is applied to BL and SL with lower select gate voltage to create band-to-band breakdown to generate the hole current. alesha peterson

US9634097B2 - 3D NAND with oxide semiconductor channel

WitrynaNAND architecture Flash memory strings, memory arrays, and memory devices are described that utilize continuous channel enhancement and depletion mode floating gate memory cells. Depletion mode floating gate memory cells allow for increased cell current through lower channel rds resistance and decreased “narrow width” effect, allowing … Witrynasufficient GIDL current to bias up the body of the NAND string to the desired erase voltage (Fig. 5). Biasing of the body by GIDL current from both ends achieves … Witryna7 gru 2005 · Abstract The cell string current of NAND flash memory is very small due to large resistance from the cells connected in series. In this paper, scaling effects on … alesha dixon zodiac sign